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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD789/D Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low-current, high speed switching applications. * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min) -- BD789, BD790 VCEO(sus) = 100 Vdc (Min) -- BD791, BD792 * High DC Current Gain @ IC = 200 mAdc hFE = 40-250 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc * High Current Gain -- Bandwidth Product -- fT = 40 MHz (Min) @ IC = 100 mAdc) *MAXIMUM RATINGS Rating BD789 BD791* PNP BD790 BD792* *Motorola Preferred Device NPN 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 15 WATTS TC PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I III I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII Symbol VCEO VCB BD789 BD790 80 80 BD791 BD792 100 100 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VEBO IC IB 6.0 4.0 8.0 1.0 Collector Current -- Continuous -- Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 15 0.12 Watts W/_C TJ,Tstg - 65 to + 150 CASE 77-08 TO-225AA TYPE _C THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance, Junction to Case 16 8.34 _C/W 1.6 TA PD, POWER DISSIPATION (WATTS) 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 100 120 80 T, TEMPERATURE (C) 140 0 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII BD789 BD791 BD790 BD792 * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Small-Signal Current Gain (IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IC = 0, f = 0.1 MHz) Current-Gain -- Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz) Base-Emitter On Voltage (IC = 200 mAdc, VCE = 3.0 Vdc) Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (IC = 2.0 Adc, IB = 200 mAdc) (IC = 4.0 Adc, IB = 800 mAdc) DC Current Gain (IC = 200 mAdc, VCE = 3 0 Vdc) (IC = 1.0 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 40 Vdc, VBE(off) = 1 5 Vdc, TC = 125_C) (VCE = 50 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) 2 + 11 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg MBR340 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. tr, tf 10 ns DUTY CYCLE = 1.0% 0 25 s v RB t, TIME (ns) - 9.0 V Figure 2. Switching Time Test Circuit v 51 [ [ Characteristic -4V D1 + 30 V VCC v 2.0%. RC SCOPE BD789, BD790 BD791, BD792 BD789, BD790 BD791, BD792 BD789, BD791 BD790, BD792 BD789, BD790 BD791, BD792 BD789, BD790 BD791, BD792 100 300 200 500 10 7.0 5.0 0.04 30 20 70 50 Motorola Bipolar Power Transistor Device Data 0.06 0.1 BD789, 791 (NPN) BD790, 792 (PNP) VCEO(sus) VCE(sat) VBE(sat) VBE(on) 1.0 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMP) Symbol ICEO IEBO ICEX Cob hFE hfe fT Min 80 100 40 20 10 5.0 10 40 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max 250 -- -- -- 100 100 1.5 1.8 0.5 1.0 2.5 3.0 1.0 1.0 1.0 0.1 0.1 50 70 -- -- -- -- Figure 3. Turn-On Time td @ VBE(off) = 5.0 V TJ = 25C VCC = 30 V IC/IB = 10 2.0 tr MHz Unit Vdc Vdc Vdc Vdc pF -- -- mAdc Adc Adc Adc 4.0 BD789 BD791 BD790 BD792 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 D = 0.5 0.2 0.1 0.05 P(pk) RJC(t) = r(t) RJC RJC = 8.34C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 20 50 100 200 0.02 0.01 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) t1 t2 DUTY CYCLE, D = t1/t2 5.0 10 Figure 4. Thermal Response 10 5.0 IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.5 TJ = 150C 5.0 ms BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BD789 (NPN) BD790 (PNP) BD791 (NPN) BD792 (PNP) 1.0 2.0 3.0 5.0 7.0 10 50 70 100 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc 100 s 1.0 ms 500 s 0.1 0.05 0.02 0.01 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 5. Active Region Safe Operating Area 2000 1000 700 500 t, TIME (ns) 300 200 100 70 50 30 20 0.04 0.06 BD789, 791 (NPN) BD790, 792 (PNP) 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 200 TJ = 25C C, CAPACITANCE (pF) 100 70 50 Cib tf 30 20 10 1.0 2.0 BD789, 791 (NPN) BD790, 792 (PNP) Cob 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 BD789 BD791 BD790 BD792 NPN BD789, BD791 500 300 200 hFE, DC CURRENT GAIN 100 70 50 30 20 7.0 5.0 0.04 0.06 25C - 55C TJ = 150C VCE = 1.0 V VCE = 3.0 V hFE, DC CURRENT GAIN 200 100 70 50 30 20 10 7.0 5.0 3.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 2.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 TJ = 150C 25C - 55C VCE = 1.0 V VCE = 3.0 V NPN BD790, BD792 Figure 8. DC Current Gain 1.4 TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 VCE(sat) 0.2 0.4 0.6 1.0 2.0 4.0 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3.0 V IC/IB = 10 5.0 V, VOLTAGE (VOLTS) 1.4 TJ = 25C 1.2 1.0 0.8 0.6 0.4 5.0 0.2 VCE(sat) 0.2 0.4 0.6 1.0 2.0 4.0 0 0.04 0.06 0.1 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3.0 V IC/IB = 10 0 0.04 0.06 0.1 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 VB FOR VBE 0.1 0.2 *VC FOR VCE(sat) 25C to 150C - 55C to 25C 25C to 150C - 55C to 25C 0.4 0.6 1.0 2.0 4.0 *APPLIES FOR IC/IB hFE/3 + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.04 0.06 0.1 0.2 VB FOR VBE - 55C to 25C 0.4 0.6 1.0 2.0 4.0 25C to 150C *VC FOR VCE(sat) - 55C to 25C 25C to 150C *APPLIES FOR IC/IB hFE/3 - 2.5 0.04 0.06 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients 4 Motorola Bipolar Power Transistor Device Data BD789 BD791 BD790 BD792 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 5 BD789 BD791 BD790 BD792 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *BD789/D* BD789/D |
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